P6SMB13AT3G
Manufacturer:
On Semiconductor
Mfr.Part #:
P6SMB13AT3G
Datasheet:
Description:
TVS Diodes SMB(DO-214AA) SMD/SMT Working Voltage:11.1 V Breakdown Voltage:12.4 V Clamping Voltage:18.2 V Peak Pulse Power:600 W Polarity:Unidirectional
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 13 V |
| Length | 4.32 mm |
| Width | 3.56 mm |
| Termination | SMD/SMT |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -65 °C |
| Number of Pins | 2 |
| Leakage Current | 5 µA |
| Power Rating | 600 W |
| Composition(Kit Type) | Zener |
| Height | 2.13 mm |
| Packaging | Reel |
| Depth | 3.56 mm |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| Polarity | Unidirectional |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Operating Supply Voltage | 11.1 V |
| Power Dissipation | 600 W |
| Peak Pulse Current | 33 A |
| Number of Channels | 1 |
| Breakdown Voltage | 12.4 V |
| Max Reverse Leakage Current | 5 µA |
| Element Configuration | Single |
| Direction(Counting Sequence) | Unidirectional |
| Min Breakdown Voltage | 12.4 V |
| Reverse Standoff Voltage | 11.1 V |
| Clamping Voltage | 18.2 V |
| Power Line Protection | No |
| Number of Unidirectional Channels | 1 |
| Max Surge Current | 33 A |
| Reverse Breakdown Voltage | 12.4 V |
| ESD Protection | Yes |
| Test Current | 1 mA |
| Max Breakdown Voltage | 13.7 V |
| Peak Pulse Power | 600 W |
| Working Voltage | 11.1 V |
| Diode Capacitance | 1.335 nF（1335 pF） |
Out of Stock
Distributors
--
--Unit Price$--
Ext.Price$--
| Qty | Unit Price | Ext.Price |
|---|---|---|
No data | ||